The TOSHIBA TLP250 consists of a GaAlAs light emitting diode and a integrated photodetector. This unit is 8−lead DIP package. TLP250 is suitable for gate driving circuit of IGBT or power MOS FET.
1) Maximum forward voltage: 1.3v
2) Input current type: DC
3) typical rise time: 2µs
4) Maximum input current: 300mA
5) A pack of one piece